Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction hysteresis in transfer characteristics that enable their use as nonvolatile memories. differences between investigated Y-function method is applied to extract channel mobility up 112 cm2 V−1 s−1 contact resistances. present specific resistance 6.3 k Ω μm increases 18.1 for NiCr. These findings important technological exploitation BP a new class electronic optoelectronic devices.